30 January 1990 Profile Control And Stringer Removal During Plasma Etch Of Submicrometer Polysilicon Lines
Author Affiliations +
Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978052
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Polysilicon etch profile is examined as a function of process variation for submicrometer-patterned polysilicon on gate oxide. A Lam Research Rainbow 4400 single-wafer etcher was used to etch polysilicon wafers for a variety of bulk etch and overetch process combinations in order to establish trends for polysilicon etch profile using photoresist and oxide masks. Scanning electron microscope analysis was completed to determine the resulting polysilicon profile for each combination, and process trends for profile were established. A process which demonstrated profile control, critical dimension control and high oxide selectivity after extended overetch was then used to etch polysilicon lines on gate oxide over underlying topography. Scanning electron microscope analysis was completed to determine the effectiveness of the process in removing the polysilicon stringer while maintaining a vertical profile, critical dimension loss of less than 0.1 um, and gate oxide loss of less than 50 A.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Barbara Haselden, Barbara Haselden, Paula Peavey, Paula Peavey, Bill Elicson, Bill Elicson, Tofael Ahmed, Tofael Ahmed, } "Profile Control And Stringer Removal During Plasma Etch Of Submicrometer Polysilicon Lines", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978052; https://doi.org/10.1117/12.978052
PROCEEDINGS
13 PAGES


SHARE
Back to Top