30 January 1990 Radical and Molecular Product Concentration Measurements in CF4 RF Plasmas by Infrared Tunable Diode Laser Absorption RF plasmas by infrared tunable diode laser absorption
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Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978064
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Absolute concentration measurements of radicals and stable molecules formed in radio frequency plasmas were performed by infrared tunable diode laser absorption in a laboratory reactor which allows a long absorption path. In this paper we report studies of CF4 RF plasmas. We report CF2, CF4, and C2F6 concentrations in CF4 plasmas as functions of total pressure, RF power, and oxygen addition.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Wormhoudt, J. Wormhoudt, } "Radical and Molecular Product Concentration Measurements in CF4 RF Plasmas by Infrared Tunable Diode Laser Absorption RF plasmas by infrared tunable diode laser absorption", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); doi: 10.1117/12.978064; https://doi.org/10.1117/12.978064
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