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30 January 1990 Silylated Acid Hardened Resist [SAHR] Technology: Positive, Dry Developable Deep UV Resists
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Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990)
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
This paper describes continuing efforts in the development of Acid Hardened Resist (AHR) systems for use in deep UV photolithography. The Silylated AHR (SAHR) process treats a highly absorbing resist, such as XP-8928, with trimethylsilyldiethylamine. The exposed, crosslinked areas show virtually no reactivity with the silylating agent, and the unexposed areas incorporate 10 to 12% by weight silicon in the film. The silicon appears to incorporate from the exterior in a constant concentration, consistent with Case II diffusion. Subsequent dry etching leads to a positive tone image. The contrast is 5, and the photospeed is ~10 mJ/cm2. Resolution of 0.5 μm line/space pairs has been demonstrated, although substantial proximity effects are encountered.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James W. Thackeray, John F. Bohland, Edward K. Pavelchek,, George W. Orsula, Andrew W. McCullough, Susan K. Jones, and Stephen M. Bobbio "Silylated Acid Hardened Resist [SAHR] Technology: Positive, Dry Developable Deep UV Resists", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990);

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