Update of >300W high power LPP-EUV source challenge IV for semiconductor HVM

Hakaru Mizoguchi; Hiroaki Tomuro; Yuichi Nishimura; Hirokazu Hosoda; Hiroaki Nakarai; Tamotsu Abe; Hiroshi Tanaka; Yukio Watanabe; Yutaka Shiraishi; Tatsuya Yanagiga; Georg Soumagne; Fumio Iwamoto; Shinji Nagai; Yoshifumi Ueno; Takashi Suganuma; Gouta Niimi; Takayuki Yabu; Tsuyoshi Yamada; Takashi Saitou

doi:10.1117/12.2600714

13 October 2021 Update of >300W high power LPP-EUV source challenge IV for semiconductor HVM

Hakaru Mizoguchi, Hiroaki Tomuro, Yuichi Nishimura, Hirokazu Hosoda, Hiroaki Nakarai, Tamotsu Abe, Hiroshi Tanaka, Yukio Watanabe, Yutaka Shiraishi, Tatsuya Yanagiga, Georg Soumagne, Fumio Iwamoto, Shinji Nagai, Yoshifumi Ueno, Takashi Suganuma, Gouta Niimi, Takayuki Yabu, Tsuyoshi Yamada, Takashi Saitou

Author Affiliations +

Proceedings Volume 11854, International Conference on Extreme Ultraviolet Lithography 2021; 118540K (2021) https://doi.org/10.1117/12.2600714
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only

Abstract

The extreme ultraviolet (EUV) light source has been developed together with the lithography EUV scanner. As tool with a 10 W EUV light source, ASML shipped the “a-demo tool” in 20071) and Nikon shipped EUV-1 in 20082). Then ASML developed the b-tool, NXE-3100, at the beginning of 2011 with a 100 W EUV light source.3)4) Requirement of the EUV exposure tool is now covered by the g-tool; NXE3300 (for high volume manufacturing (HVM))5). The required EUV power is 250 W clean power (after purifying infrared (IR) and deep ultra violet (DUV) spectra) at intermediate focus (IF). However, the demonstrated power level was around 80 W6)7) in 2013.

Conference Presentation

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Hakaru Mizoguchi, Hiroaki Tomuro, Yuichi Nishimura, Hirokazu Hosoda, Hiroaki Nakarai, Tamotsu Abe, Hiroshi Tanaka, Yukio Watanabe, Yutaka Shiraishi, Tatsuya Yanagiga, Georg Soumagne, Fumio Iwamoto, Shinji Nagai, Yoshifumi Ueno, Takashi Suganuma, Gouta Niimi, Takayuki Yabu, Tsuyoshi Yamada, and Takashi Saitou "Update of >300W high power LPP-EUV source challenge IV for semiconductor HVM", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540K (13 October 2021); https://doi.org/10.1117/12.2600714

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