Translator Disclaimer
5 February 1990 Analysis Of Nonlinear Optical Phenomena: Perspective Of in situ Monitoring Method Of The Semiconductor-Film Crystal-Structure
Author Affiliations +
Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963932
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
In the process of the molecular beam epitaxy (MBE) the electron diffraction is traditionally used for nondestructive crystal-structure monitoring. We have shown that similar results could be obtained by detection of the second harmonic of the laser light generated in a film (SHG-method). Laser-assisted methods are very attractive for diagnostics in high-vacuum systems. It is easy to input and to output radiation via small diameter windows. It is also easy to realize distant continuous local monitoring during the growth process.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Balaniuk, V. Krasnov, N. Kul'chitzkii, S. Musher, V. Proc', A. Rubenchik, V. Ryabchenko, M. Stupak, S. Strutz, and V. Khryapov "Analysis Of Nonlinear Optical Phenomena: Perspective Of in situ Monitoring Method Of The Semiconductor-Film Crystal-Structure", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963932
PROCEEDINGS
3 PAGES


SHARE
Advertisement
Advertisement
Back to Top