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5 February 1990 High Precision Measurement Of Phosphorus In Thin Glass Films Using X-Ray Fluorescence
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Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963913
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Use of sapphire substrates instead of silicon for measurement of phosphorus in BPSGs and PSGs can improve the precision of the phosphorus measurement from 3σ = 0.32 wt.% to 3o = 0.05 wt.%. Improvement in precision results from elimination of the background silicon counts, elimination of film thickness as a factor in phosphorus calculations, use of peak intensity ratios rather than absolute intensities, and elimination of wafer reloading effects.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael C. Madden and J. Neal Cox "High Precision Measurement Of Phosphorus In Thin Glass Films Using X-Ray Fluorescence", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963913
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