IN SITU Analysis Of The Growth Of Semiconductor Materials By Phase Modulated Ellipsometry From UV To IR

B. Drevillon

doi:10.1117/12.963922

5 February 1990 IN SITU Analysis Of The Growth Of Semiconductor Materials By Phase Modulated Ellipsometry From UV To IR

B. Drevillon

Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963922
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Examples of applications of in situ spectroscopic polarization techniques (from UV to IR) to the study of the growth of semiconductor materials are presented. The high sensitivity of these in situ diagnostics is emphasized. In particular, the ability of kinetic ellipsometry in the UV range, to study interfaces involving reactive processes like plasma deposition, with submonolayer resolution, is described. In the UV-visible range, it is shown that reflectance-difference spectroscopy (RDS) allows the real-time characterization of crystalline III-V materials and heterojunctions. In the infrared, ellipsometry appears particularly well adapted for performing detailed analysis of the vibrational properties and the growth processes of amorphous thin films. Such sensitivity to film deposition mechanisms illustrates the capacity of real-time optical diagnostics for fundamental studies and in situ control process.

Citation Download Citation

B. Drevillon "IN SITU Analysis Of The Growth Of Semiconductor Materials By Phase Modulated Ellipsometry From UV To IR", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963922

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