IN-SITU Diagnostics For Deposition And Processing Of High Tc Superconducting Thin Films

T. Venkatesan

doi:10.1117/12.963918

5 February 1990 IN-SITU Diagnostics For Deposition And Processing Of High T_c Superconducting Thin Films

T. Venkatesan

Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963918
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

The deposition of high quality superconducting thin films based on the metal oxides has given rise to a variety of needs for diagnostic techniques. These needs are primarily for monitoring, 1. the material ejection process from the target, 2. the ejected vapor interaction with the background oxygen, 3. the crystallization dynamics at the substrate and 4. post deposition analysis and processing of the film. This paper summarizes some of the recent work in this direction

Citation Download Citation

T. Venkatesan "IN-SITU Diagnostics For Deposition And Processing Of High T_c Superconducting Thin Films", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963918

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