5 February 1990 IN-SITU Monitoring Of OMVPE Of GaAs And Ga1-xAlxAs (x = 0.17) By Contactless Photoreflectance
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Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963914
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
We have successfully applied the contactless, non-invasive electromodulation method of photoreflectance as an in-situ sensor of the OMVPE process. The direct gaps of GaAs and Ga1-xAlxAs(x = 0.17) have been measured as a function of temperature up to 690°C, in-situ, under actual OMVPE growth conditions, including a rotating substrate holder (~ 500 rev/min) and flowing gases.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Shen, Z. Hang, Fred H. Pollak, K. Capuder, Peter E. Norris, "IN-SITU Monitoring Of OMVPE Of GaAs And Ga1-xAlxAs (x = 0.17) By Contactless Photoreflectance", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963914; https://doi.org/10.1117/12.963914
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