5 February 1990 IN-SITU Monitoring Of OMVPE Of GaAs And Ga1-xAlxAs (x = 0.17) By Contactless Photoreflectance
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Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963914
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
We have successfully applied the contactless, non-invasive electromodulation method of photoreflectance as an in-situ sensor of the OMVPE process. The direct gaps of GaAs and Ga1-xAlxAs(x = 0.17) have been measured as a function of temperature up to 690°C, in-situ, under actual OMVPE growth conditions, including a rotating substrate holder (~ 500 rev/min) and flowing gases.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Shen, H. Shen, Z. Hang, Z. Hang, Fred H. Pollak, Fred H. Pollak, K. Capuder, K. Capuder, Peter E. Norris, Peter E. Norris, } "IN-SITU Monitoring Of OMVPE Of GaAs And Ga1-xAlxAs (x = 0.17) By Contactless Photoreflectance", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963914; https://doi.org/10.1117/12.963914
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