5 February 1990 Investigation Of Photoablation As A Patterning Technique For Silicon Based Integrated Circuits: Laser Ablation And Physical Damage Threshold Considerations
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Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990); doi: 10.1117/12.963916
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Damage threshold energies for a pulsed XeCl excimer laser at 308nm have been obtained for a number of microelectronic materials which may have patterning applications. A photoacoustic technique is used to identify the damage process. An example of laser patterning illustrating the constraints on laser energy is given.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. L. Singleton, G. Paraskevopoulos, A. D. Buckthought, R. S. Irwin, G. S. Jolly, I.T. Ali Emesh, "Investigation Of Photoablation As A Patterning Technique For Silicon Based Integrated Circuits: Laser Ablation And Physical Damage Threshold Considerations", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963916; https://doi.org/10.1117/12.963916
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KEYWORDS
Laser ablation

Laser damage threshold

Silicon

Optical lithography

Excimer lasers

Photoacoustic spectroscopy

Aluminum

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