5 February 1990 Observations Of Epitaxial Growth Using Scanning Tunneling Microscopy
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Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963925
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
An ultrahigh vacuum system has been built which allows molecular beam epitaxial deposition of compound semiconductors and scanning tunneling microscopy (STM) imaging, as well as angle-resolved photoemission, X-ray photoemission and Auger electron spectroscopies, and low energy electron diffraction. Samples can be moved from station to station for individual operations. We demonstrate the utility of the system with examples of homoepitaxial GaAs(100) and GaAs(111) surfaces, and heteroepitaxial GaAs/Si(100). We also compare the STM results with complementary measurements from the literature. Finally, we comment on the utility of such systems.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. K. Biegelsen, R. D. Bringans, L. E. Swartz, "Observations Of Epitaxial Growth Using Scanning Tunneling Microscopy", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963925; https://doi.org/10.1117/12.963925
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