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5 February 1990 Photoelectrochemically Induced Copper Deposition On P-Silicon Electrodes From CuCN Solutions
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Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963924
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
We have studied the mechanisms of the copper metallization on P-silicon wafers immersed in CuCN solutions, using photoelectrochemical measurements and optical/electron microscopy. In this process the electroplating is enhanced by the minority carries in illuminated areas of the silicon. cathode. The photo-selective deposition with high resolution have been obtained only on low doped P-silicon. The kinectics of the film growth is strongly dependent on the film thickness, and two mechanisms have been identified. Patterns of resolution of ~4 microns can be realized only with thickness bellow ~20 nm. Further investigation is needed for prevent the oxidation of the as-deposited film.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. T. Silva, G. P. Thim, A. W. Mol, and V. Baranauskas "Photoelectrochemically Induced Copper Deposition On P-Silicon Electrodes From CuCN Solutions", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963924
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