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5 February 1990 Reflectance-difference spectroscopy of GaAs crystal growth by OMCVD
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Proceedings Volume 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth; (1990) https://doi.org/10.1117/12.963921
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
This paper summarizes results of our investigations of growth on (001) and (110) GaAs by atmospheric-pressure organometallic chemical vapor deposition (OMCVD). We follow evolutions of surface species to a sensitivity of 0.01 monolayer (ML) on a time scale of 0.1 s under alternating flows of trimethylgallium (TMG) and arsine (AsH3) as functions of partial pressure, sample temperature, and surface orienta-tion. The reaction of TMG with an AsH3-saturated (001) surface is rate-limited by com-petition between desorption and decomposition of TMG molecules chemisorbed to surface lattice sites via an excluded-volume mechanism, while the reaction of AsH3 with the TMG-saturated (001) surface is essentially instantaneous. In contrast, TMG reacts essentially instantaneously with the AsH3 -saturated (110) surface while the AsH3 reaction with the TMG-saturated (110) surface is the rate-limiting step. However, the latter rate is not intrinsic to the AsH3-surface reaction but appears to be determined by desorption of adsorbed species that block active sites.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Colas, D. E. Aspnes, R. Bhat, A. A. Studna, M. A. Koza, and V. G. Keramidas "Reflectance-difference spectroscopy of GaAs crystal growth by OMCVD", Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); https://doi.org/10.1117/12.963921
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