Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector

V. Arounassalame; M. Bouschet; R. Alchaar; A. Ramiandrasoa; S. Bernhardt; C. Bataillon; J.-P. Perez; P. Christol; I. Ribet-Mohamed

doi:10.1117/12.2598159

12 September 2021 Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector

V. Arounassalame, M. Bouschet, R. Alchaar, A. Ramiandrasoa, S. Bernhardt, C. Bataillon, J.-P. Perez, P. Christol, I. Ribet-Mohamed

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Proceedings Volume 11866, Electro-Optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV; 1186606 (2021) https://doi.org/10.1117/12.2598159
Event: SPIE Security + Defence, 2021, Online Only

Abstract

In this communication, we report on electrical and electro-optical characterizations of InAs/InAsSb Type-II superlattice (T2SL) MWIR photodetector, showing a cut-off wavelength at 5 μm. The device, made of a barrier structure in XBn configuration, was grown by molecular beam epitaxy (MBE) on GaSb substrate. At 150K, dark current measurements shows a device in the Shockley-Read-Hall (SRH) regime but with an absolute value comparable to the state-of-the-art. A quantum efficiency of 50% at the wavelength of 3 μm for a 3 μm thick absorption layer is found in simple pass configuration and front-side illumination. Combined with lifetime measurements performed on dedicated samples through time resolved photoluminescence (TRPL) technique, mobility is extracted from these measurements by using a theoretical calculation of the quantum efficiency thanks to Hovel’s equations. Such an approach helps us to better understand the hole minority carrier transport in Ga-free T2SL MWIR XBn detector and therefore to improve its performance.

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V. Arounassalame, M. Bouschet, R. Alchaar, A. Ramiandrasoa, S. Bernhardt, C. Bataillon, J.-P. Perez, P. Christol, and I. Ribet-Mohamed "Electro-optical characterizations to study minority carrier transport in Ga-free InAs/InAsSb T2SL XBn midwave infrared photodetector", Proc. SPIE 11866, Electro-Optical and Infrared Systems: Technology and Applications XVIII and Electro-Optical Remote Sensing XV, 1186606 (12 September 2021); https://doi.org/10.1117/12.2598159

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