Epitaxial and As-Grown Preparation of Ba2YCu3Ox Thin Films on Si with Epitaxially Grown ZrO2 as a Buffer Layer

Hiroaki Myoren; Yukio Osaka; Yukio Nishiyama; Naokazu Miyamoto; Hirofumi Fukumoto; Hiroyuki Nasu; Toshihiko Hamasaki

doi:10.1117/12.965148

19 March 1990 Epitaxial and As-Grown Preparation of Ba₂YCu₃O_x Thin Films on Si with Epitaxially Grown ZrO₂ as a Buffer Layer

Hiroaki Myoren, Yukio Osaka, Yukio Nishiyama, Naokazu Miyamoto, Hirofumi Fukumoto, Hiroyuki Nasu, Toshihiko Hamasaki

Author Affiliations +

Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965148
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

High-Tc superconducting Ba2YCu3Ox thin films have been epitaxially grown on Si(100) substrates with the epitaxially grown Zr02 or yttria-stabilized zirconia (YSZ) as a buffer layer. The thin films were prepared by rf magnetron sputtering of the stoichiometric Ba2YCu30x target below 700°C. An adequate positive substrate bias was necessary to ensure surface smoothness and to show the superconducting transition above liquid nitrogen temperature without any post-treatment. The highest Tc(onset) and Tc(end) observed were 88K and 84K, respectively. The critical current density was Mx105A/cm2 at 50K. Using the silicon substrates patterned with the trench, the superconducting microbridge junction has been fabricated in as-grown Ba2YCu3Ox thin films by rf-magnetron sputtering. The microbridge junctions with constrictions as small as submicron dimension were obtained. These microbridge junctions behaved as Josephson junction and were observed microwave-induced steps. Based on Likharev's theory, it is suggested that these devices show Josephson effect in the Abrikosov vortex motion region.

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Hiroaki Myoren, Yukio Osaka, Yukio Nishiyama, Naokazu Miyamoto, Hirofumi Fukumoto, Hiroyuki Nasu, and Toshihiko Hamasaki "Epitaxial and As-Grown Preparation of Ba₂YCu₃O_x Thin Films on Si with Epitaxially Grown ZrO₂ as a Buffer Layer", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965148

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