High-Tc Superconducting Bi Based Thin Films Prepared By Layer Controlled Deposition

Kentaro Setsune; Makoto Kitabatake; Tomoaki Matsushima; Yo Ichikawa; Hideaki Adachi; Kiyotaka Wasa

doi:10.1117/12.965144

19 March 1990 High-Tc Superconducting Bi Based Thin Films Prepared By Layer Controlled Deposition

Kentaro Setsune, Makoto Kitabatake, Tomoaki Matsushima, Yo Ichikawa, Hideaki Adachi, Kiyotaka Wasa

Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965144
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

High-Tc superconducting thin films of Bismuth layered perovskite were artificially prepared by reactive sequential deposition of Bi, SrCu, and CaCu using DC magnetron multitarget sputtering. This deposition technique achieves a selective growth for Bismuth system composed with four and five Cu-0 planes by controlling the deposition time of CaCu oxide and its input power. These were post annealed and it was made sure that thin films with five Cu-0 planes did not exhibit zero resistivity. In order to obtain the as-deposited superconducting thin films, intermittent deposition technique was investigated. The Details about this fabrication process were studied referring to superconducting properties and crystal structure.

Citation Download Citation

Kentaro Setsune, Makoto Kitabatake, Tomoaki Matsushima, Yo Ichikawa, Hideaki Adachi, and Kiyotaka Wasa "High-Tc Superconducting Bi Based Thin Films Prepared By Layer Controlled Deposition", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965144

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