19 March 1990 High-Tc Superconducting Bi Based Thin Films Prepared By Layer Controlled Deposition
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Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965144
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
High-Tc superconducting thin films of Bismuth layered perovskite were artificially prepared by reactive sequential deposition of Bi, SrCu, and CaCu using DC magnetron multitarget sputtering. This deposition technique achieves a selective growth for Bismuth system composed with four and five Cu-0 planes by controlling the deposition time of CaCu oxide and its input power. These were post annealed and it was made sure that thin films with five Cu-0 planes did not exhibit zero resistivity. In order to obtain the as-deposited superconducting thin films, intermittent deposition technique was investigated. The Details about this fabrication process were studied referring to superconducting properties and crystal structure.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kentaro Setsune, Kentaro Setsune, Makoto Kitabatake, Makoto Kitabatake, Tomoaki Matsushima, Tomoaki Matsushima, Yo Ichikawa, Yo Ichikawa, Hideaki Adachi, Hideaki Adachi, Kiyotaka Wasa, Kiyotaka Wasa, } "High-Tc Superconducting Bi Based Thin Films Prepared By Layer Controlled Deposition", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965144; https://doi.org/10.1117/12.965144
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