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19 March 1990 High-Tc Superconducting Bi Based Thin Films Prepared By Layer Controlled Deposition
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Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965144
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
High-Tc superconducting thin films of Bismuth layered perovskite were artificially prepared by reactive sequential deposition of Bi, SrCu, and CaCu using DC magnetron multitarget sputtering. This deposition technique achieves a selective growth for Bismuth system composed with four and five Cu-0 planes by controlling the deposition time of CaCu oxide and its input power. These were post annealed and it was made sure that thin films with five Cu-0 planes did not exhibit zero resistivity. In order to obtain the as-deposited superconducting thin films, intermittent deposition technique was investigated. The Details about this fabrication process were studied referring to superconducting properties and crystal structure.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kentaro Setsune, Makoto Kitabatake, Tomoaki Matsushima, Yo Ichikawa, Hideaki Adachi, and Kiyotaka Wasa "High-Tc Superconducting Bi Based Thin Films Prepared By Layer Controlled Deposition", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965144
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