19 March 1990 Layered Growth Of HTSC Thin Films Using Pulsed Laser Deposition
Author Affiliations +
Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965151
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
I. Introduction: Characteristic Features Of Laser Ablation Method For HTSC Thin Films Among the various methods for the HTSC film formation, the laser ablation method has following advantages. First, the film formation can be performed under a high oxygen or N20 pressure, such as 10-1 torr.1 This condition is not easily satisfied by other techniques such as MBE and evaporation. Second, there is small deviation of the composition of the films from the target composition used for the film formation. This is advantageous for the films with multi-component systems, such as Y-Ba-CL-O2 or Bi-Sr-Ca-Cu-0.3) Third, photochemically excited species produced by ablation can contribute to the low temperature film formation.4) Furthermore, the laser beam can be intentionally used for the substrate excitation to lower the substrate temperature and to increase the crystallinity of the films.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomoji Kawai, Tomoji Kawai, Masaki Kanai, Masaki Kanai, Hitoshi Tabata, Hitoshi Tabata, Ken Horiuchi, Ken Horiuchi, Shichio Kawai, Shichio Kawai, } "Layered Growth Of HTSC Thin Films Using Pulsed Laser Deposition", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965151; https://doi.org/10.1117/12.965151

Back to Top