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19 March 1990 Materials and Tunneling Characteristics of HTSC Y1Ba2Cu3O7-x Thin Films by Molecular Beam Epitaxy
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Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965149
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
The capability of developing an efficient activated oxygen source in conjunction with molecular beam epitaxy has led to successful thin film synthesis of Y1Ba2Cu3O7-x, high temperature superconductors. The smooth morphology and well ordered surface structures of these in-situ grown films allow to conduct superconducting tunneling experiments directly in a planar junction mode. We review in this paper in-situ film growth, materials and superconducting properties, and quasiparticle tunneling characteristics of Y1Ba2Cu3O7-x/native barrier/Pb junctions.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Kwo, M. Hong, T. A. Fulton, P. L. Gammel, and J. P. Mannaerts "Materials and Tunneling Characteristics of HTSC Y1Ba2Cu3O7-x Thin Films by Molecular Beam Epitaxy", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965149
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