19 March 1990 Preparation and Characterization of Pulsed Laser Deposited HTSC Films
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Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965161
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
High Tc superconductor films were prepared by laser deposition. Epitaxial YBaCuO films with high critical current density are obtained for a uniform laser beam energy density of about 4 J/cm2, a substrate temperature above 730°C and an oxygen pressure of 0.3 to 0.5 mbar. Using identical parameters, LaA103 interlayers grow epitaxially on the YBaCuO films and can therefore be used as insulating layers in multi-layer structures. For the Bi(Pb)SrCaCuO system, both the 80 K and the 110 K phase can be prepared in-situ with inductively measured 111's of 77 K and 80 K, respectively. A subsequent annealing step improves these values. For the 110 K phase a Tc(R = 0) of 98 K was obtained. Whereas the critical current densities in the Bi(Pb)SrCaCuO films must still be improved, the epitaxial YBaCuO films show high critical current densities as 5 x 106 A/cm2 at 77 K and zero field or 5 x 107 A/cm2 at 4.2 K and 7 T (for the magnetic field in the film plane). The critical current densities are affected by defects introduced by ion irradiation.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Schultz, L. Schultz, B. Roas, B. Roas, P. Schmitt, P. Schmitt, G. Endres, G. Endres, } "Preparation and Characterization of Pulsed Laser Deposited HTSC Films", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965161; https://doi.org/10.1117/12.965161
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