19 March 1990 Raman Spectroscopy Diagnostics For HIGH-Tc Thin Films
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Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965169
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Raman spectroscopy can provide information about stoichiometry, oxygen content, and crystal structure of high-Tc thin films in a rapid, contactless, non-destructive manner at room temperature. Data are presented for both polycrystalline and single crystal-like films. An example is given of the potential utility for direct local analysis of patterned films with features as small as 1µm.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. A. Farrow, L. A. Farrow, Siu-Wai Chan, Siu-Wai Chan, L. H. Greene, L. H. Greene, W. L. Feldmann, W. L. Feldmann, T. Venkatesan, T. Venkatesan, W. A. Bonner, W. A. Bonner, R. R. Krchnavek, R. R. Krchnavek, S. J. Allen, S. J. Allen, "Raman Spectroscopy Diagnostics For HIGH-Tc Thin Films", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965169; https://doi.org/10.1117/12.965169

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