Raman Spectroscopy Diagnostics For HIGH-Tc Thin Films

L. A. Farrow; Siu-Wai Chan; L. H. Greene; W. L. Feldmann; T. Venkatesan; W. A. Bonner; R. R. Krchnavek; S. J. Allen

doi:10.1117/12.965169

19 March 1990 Raman Spectroscopy Diagnostics For HIGH-T_c Thin Films

L. A. Farrow, Siu-Wai Chan, L. H. Greene, W. L. Feldmann, T. Venkatesan, W. A. Bonner, R. R. Krchnavek, S. J. Allen

Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965169
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Raman spectroscopy can provide information about stoichiometry, oxygen content, and crystal structure of high-Tc thin films in a rapid, contactless, non-destructive manner at room temperature. Data are presented for both polycrystalline and single crystal-like films. An example is given of the potential utility for direct local analysis of patterned films with features as small as 1µm.

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L. A. Farrow, Siu-Wai Chan, L. H. Greene, W. L. Feldmann, T. Venkatesan, W. A. Bonner, R. R. Krchnavek, and S. J. Allen "Raman Spectroscopy Diagnostics For HIGH-T_c Thin Films", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); https://doi.org/10.1117/12.965169

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