19 March 1990 (Rubidium,Barium) Bismuth Oxide: A Model Material For Molecular Beam Epitaxy Of Perovskites
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Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965145
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
(Rb,Ba)Bi03 is a model material for the application of molecular beam epitaxy (MBE) to the growth of the superconducting perovskites. Synthesis of the superconducting phase can be accomplished in situ at temperatures between 300°C and 400°C, which has allowed the growth of superconducting films on silicon substrates. Measurements of the sticking coefficients for various growth conditions have shown that in a narrow region of flux compositions, adsorption and desorption rates of bismuth and rubidium (and possibly barium) will control the stoichiometry of the film. The epitaxy proceeds in the normal (1 0 0) orientation on [1 0 0) SrTiO3, despite a 10% lattice mismatch. On (10 0) MgO substrates, (1 1 0) epitaxy is obtained at lower substrate temperatures, while lattice matched (10 0) epitaxy occurs at higher substrate temperatures.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. S. Hellman, E. S. Hellman, E. H. Hartford, E. H. Hartford, } "(Rubidium,Barium) Bismuth Oxide: A Model Material For Molecular Beam Epitaxy Of Perovskites", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965145; https://doi.org/10.1117/12.965145
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