19 March 1990 Tunneling in E-Beam Evaporated High-Tc Superconducting Thin Film
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Proceedings Volume 1187, Processing of Films for High Tc Superconducting Electronics; (1990) https://doi.org/10.1117/12.965173
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Electron tunneling for YBa2Cu3O7-x(YBCO) thin film prepared by activated reactive evapo-ration technique has been studied using normal conductor-insulator-superconductor (NIS) tunnel junctions and using superconductor-insulator-superconductor(SIS) tunnel junctions. Based on data of NIS using single crystal thin film of YBC0(001), reproducible gap parameter ▵⊥(4.6K) of 9.0 ± 1.8meV and a coupling constant of 2.4 ± 0.5 < 2▵⊥(0)/kTc < 3.5 ±0.7 in perpendicular direction to the Cu-0 planes were obtained. The quasi-particle density of states exhibits a lifetime broadening picture. The recombination lifetime t r of quasiparticle decreases as the temperature approaching to the transition point from low temperatures. 77, at 60K is estimated to be 10-13 s. Multipeaks which are often observed in differential tunnel conductance spectra of (110) or (103) oriented thin film of YBCO are understood as not to be an intrinsic property of YBCO.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Takada, T. Terashima, Y. Bando, H. Mazaki, K. Iijima, K. Yamamoto, and K. Hirata "Tunneling in E-Beam Evaporated High-Tc Superconducting Thin Film", Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965173; https://doi.org/10.1117/12.965173
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