15 February 1990 Contamination Of Remote Plasma Processes Upon Addition Of Hydrogen As A Downstream Reagent Gas
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Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990); doi: 10.1117/12.963946
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
The flexibility of the remote plasma process qualifies it as a tool for multiple step processing. Cross-contamination of remote plasma processes via interactions of reactant gasses with the chamber wall deposits has been observed when hydrogen has been introduced as a downstream reagent gas. This has been observed for both substrate cleaning prior to epitaxy and during epitaxy. With proper precautions and chamber wall conditioning, the contamination problem can he eliminated. Thus, integration of multiple remote plasma processing steps into a single chamber is possible.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. A. Rudder, S. V. Hattangady, J. B. Posthill, G. C. Hudson, M. J. Mantini, R. J. Markunas, "Contamination Of Remote Plasma Processes Upon Addition Of Hydrogen As A Downstream Reagent Gas", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963946; https://doi.org/10.1117/12.963946
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KEYWORDS
Hydrogen

Silicon

Plasma

Germanium

Epitaxy

Contamination

Chemistry

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