Electron Beam Excited GaAs Maskless Etching Using C12 Nozzle Installed FIB/EB Combined System

Norikazu Takado; Yuichi Ide; Kiyoshi Asakawa

doi:10.1117/12.963947

15 February 1990 Electron Beam Excited GaAs Maskless Etching Using C1₂ Nozzle Installed FIB/EB Combined System

Norikazu Takado, Yuichi Ide, Kiyoshi Asakawa

Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963947
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

We have developed a new fine-beam assisted GaAs maskless etching system capable of nanofabrication; a focused ion beam (FIB) and electron beam (EB) combined etching system with a reactive gas nozzle. In this FIB/EB combined system, EB excited GaAs etching was successfully performed by irradiating Cl2 gas on a temperature-controlled substrate. 5KeV EB was raster-scanned in a 100pm X 20pm rectangular pattern on a GaAs surface. With special care to remove the native oxide layer, spatially selective etching was also confirmed on a cleaned GaAs surface by controlling the Cl2 pressure.

Citation Download Citation

Norikazu Takado, Yuichi Ide, and Kiyoshi Asakawa "Electron Beam Excited GaAs Maskless Etching Using C1₂ Nozzle Installed FIB/EB Combined System", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); https://doi.org/10.1117/12.963947

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