15 February 1990 Electron Beam Excited GaAs Maskless Etching Using C12 Nozzle Installed FIB/EB Combined System
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Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963947
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
We have developed a new fine-beam assisted GaAs maskless etching system capable of nanofabrication; a focused ion beam (FIB) and electron beam (EB) combined etching system with a reactive gas nozzle. In this FIB/EB combined system, EB excited GaAs etching was successfully performed by irradiating Cl2 gas on a temperature-controlled substrate. 5KeV EB was raster-scanned in a 100pm X 20pm rectangular pattern on a GaAs surface. With special care to remove the native oxide layer, spatially selective etching was also confirmed on a cleaned GaAs surface by controlling the Cl2 pressure.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norikazu Takado, Norikazu Takado, Yuichi Ide, Yuichi Ide, Kiyoshi Asakawa, Kiyoshi Asakawa, } "Electron Beam Excited GaAs Maskless Etching Using C12 Nozzle Installed FIB/EB Combined System", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963947; https://doi.org/10.1117/12.963947
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