15 February 1990 In Situ Planarization Of Dielectric Surfaces Using Boron Oxide
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Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963940
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
A new integrated in situ approach to deposition and planarization of dielectrics is presented. This process uses a multi chamber deposition and etch system. Using plasma enhanced deposition a sacrificial layer or boron oxide is deposited over the dielectric material. Boron oxide is observed to flow as deposited resulting in a planarized surface. After deposition the wafer is transferred under vacuum to the etch chamber where the boron oxide is removed with a 1:1 dielectric to boron oxide etch. This results in a planarized dielectric surface. Effective planarization of 25 micron wide spacings can be achieved using this process.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey Marks, Kam Law, David Wang, "In Situ Planarization Of Dielectric Surfaces Using Boron Oxide", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963940; https://doi.org/10.1117/12.963940
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