In Situ Planarization Of Dielectric Surfaces Using Boron Oxide

Jeffrey Marks; Kam Law; David Wang

doi:10.1117/12.963940

15 February 1990 In Situ Planarization Of Dielectric Surfaces Using Boron Oxide

Jeffrey Marks, Kam Law, David Wang

Author Affiliations +

Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963940
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

A new integrated in situ approach to deposition and planarization of dielectrics is presented. This process uses a multi chamber deposition and etch system. Using plasma enhanced deposition a sacrificial layer or boron oxide is deposited over the dielectric material. Boron oxide is observed to flow as deposited resulting in a planarized surface. After deposition the wafer is transferred under vacuum to the etch chamber where the boron oxide is removed with a 1:1 dielectric to boron oxide etch. This results in a planarized dielectric surface. Effective planarization of 25 micron wide spacings can be achieved using this process.

Citation Download Citation

Jeffrey Marks, Kam Law, and David Wang "In Situ Planarization Of Dielectric Surfaces Using Boron Oxide", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); https://doi.org/10.1117/12.963940

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