15 February 1990 In Situ Planarization Of Dielectric Surfaces Using Boron Oxide
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Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963940
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
A new integrated in situ approach to deposition and planarization of dielectrics is presented. This process uses a multi chamber deposition and etch system. Using plasma enhanced deposition a sacrificial layer or boron oxide is deposited over the dielectric material. Boron oxide is observed to flow as deposited resulting in a planarized surface. After deposition the wafer is transferred under vacuum to the etch chamber where the boron oxide is removed with a 1:1 dielectric to boron oxide etch. This results in a planarized dielectric surface. Effective planarization of 25 micron wide spacings can be achieved using this process.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey Marks, Jeffrey Marks, Kam Law, Kam Law, David Wang, David Wang, } "In Situ Planarization Of Dielectric Surfaces Using Boron Oxide", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963940; https://doi.org/10.1117/12.963940
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