Gas cluster ion bombardment of GaAs: XPS depth profiles and molecular dynamics modelling

Helen Oppong-Mensah; Mark A. Baker; Tim S. Nunney; Richard G White; Jonathon England; Alexander Rubinstein; John F. Watts

doi:10.1117/12.2601538

12 October 2021 Gas cluster ion bombardment of GaAs: XPS depth profiles and molecular dynamics modelling

Helen Oppong-Mensah, Mark A. Baker, Tim S. Nunney, Richard G White, Jonathon England, Alexander Rubinstein, John F. Watts

Author Affiliations +

Proceedings Volume 11883, Photoemission Spectroscopy for Materials Analysis; 1188305 (2021) https://doi.org/10.1117/12.2601538
Event: SPIE Vacuum Technologies, 2021, Glasgow, United Kingdom

Abstract

The benefits of using GCIBs for depth profiling of inorganic materials is less clear, due to issues of preferential sputtering still remaining and artefacts being introduced. XPS depth profiles have been recorded for GaAs (100) wafers using GCIBs of varying beam energies and cluster sizes to investigate the effects of different GCIB conditions on the preferential sputtering of As and ion beam induced microtopography. GCIB bombardment of GaAs has also been modelled using the molecular dynamics (MD) code to provide an insight into the effects of using different GCIB conditions for XPS depth profiling of compound semiconductors, such as GaAs

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Citation Download Citation

Helen Oppong-Mensah, Mark A. Baker, Tim S. Nunney, Richard G White, Jonathon England, Alexander Rubinstein, and John F. Watts "Gas cluster ion bombardment of GaAs: XPS depth profiles and molecular dynamics modelling", Proc. SPIE 11883, Photoemission Spectroscopy for Materials Analysis, 1188305 (12 October 2021); https://doi.org/10.1117/12.2601538

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