6 April 1990 A New Method For Evaluating Temperature Distribution By Using Si + + B + Implantation
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963961
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
A method for evaluating temperature distributions between 400 °C and 600 °C have been studied by utilizing Si+ + B+ implantation. From the measurement of the sheet resistance(ps ), the equations shown in ps =3.8x10-8( t )-0.6 exp(Ea / kT) (Furnace anneal), Ps = 9.0x10-9( t )-0.5 exp( Ea / kT) (RTA) are obtained. And an obtained activation energy ( Ea) of 1.9eV is equivalent to that of solid phase epitaxial regrowth. From the distribution of the sheet resistance, the estimation of the temperature distribution between 400°C and 600 °C becomes possible for annealing times from lsec. to lhour.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeo Onishi, Kenichi Tanaka, Keizo Sakiyama, "A New Method For Evaluating Temperature Distribution By Using Si + + B + Implantation", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963961; https://doi.org/10.1117/12.963961
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