6 April 1990 A New Method For Evaluating Temperature Distribution By Using Si + + B + Implantation
Author Affiliations +
Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963961
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
A method for evaluating temperature distributions between 400 °C and 600 °C have been studied by utilizing Si+ + B+ implantation. From the measurement of the sheet resistance(ps ), the equations shown in ps =3.8x10-8( t )-0.6 exp(Ea / kT) (Furnace anneal), Ps = 9.0x10-9( t )-0.5 exp( Ea / kT) (RTA) are obtained. And an obtained activation energy ( Ea) of 1.9eV is equivalent to that of solid phase epitaxial regrowth. From the distribution of the sheet resistance, the estimation of the temperature distribution between 400°C and 600 °C becomes possible for annealing times from lsec. to lhour.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeo Onishi, Shigeo Onishi, Kenichi Tanaka, Kenichi Tanaka, Keizo Sakiyama, Keizo Sakiyama, } "A New Method For Evaluating Temperature Distribution By Using Si + + B + Implantation", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963961; https://doi.org/10.1117/12.963961


Study of Nd-implanted Si-based emitting film materials
Proceedings of SPIE (January 12 2005)
RTP temperature uniformity mapping
Proceedings of SPIE (April 01 1991)
Low-frequency noise in porous Si LED
Proceedings of SPIE (May 12 2003)
CW Laser Annealing Of Ion-Implanted Silicon
Proceedings of SPIE (January 24 1980)
An E-Beam Direct Write Process For Half Micron DRAMS
Proceedings of SPIE (June 14 1988)

Back to Top