Paper
6 April 1990 Bulk Material Analysis of Wafers Processed in RIP Round Robin
C. B. Yarling, W. A. Keenan
Author Affiliations +
Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963968
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
The Greater Silicon Valley Implant Users' Group (GSVIUG) has conducted several round robins to determine the uniformity and repeatability of modern rapid thermal processing (RTP) equipment. High-dose ion implants (5E15 As, 80keV) of 150mm wafers were used to monitor temperature distribution. Sheet resistance maps were then used to compare the uniformity and repeatability of each vendor's equipment. The results of the initial round robin evaluation showed that uniformity varied significantly with RTP vendor and implant conditions, ranging from 0.5% (one sigma/mean) to 14.0%. Vendors' RTP equipment shows a characteristics fingerprint on their sheet resistance maps, similar to the early maps of ion implant equipment. Maps from several round robins are presented that demonstrate problems with temperature distribution, chamber thermal memory, rapid edge cooling, and heat sink effects at wafer supports. Recent literature has focused on the importance of the RTP time-temperature profile. The short duration and high temperature of RTP make temperature and temperature distribution critical parameters that affect both the nature of the bulk defects as well as the final results of the implant-anneal process. This paper describes the material analysis of implanted wafers processed by various RTP equipment vendors. Results provided by spreading resistance probe (SRP) and secondary ion mass spectroscopy (SIMS) are compared with sheet resistance results. Conclusions about the time-temperature profile of RTP equipment will be made.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. B. Yarling and W. A. Keenan "Bulk Material Analysis of Wafers Processed in RIP Round Robin", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); https://doi.org/10.1117/12.963968
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KEYWORDS
Semiconducting wafers

Resistance

Aluminum

Ions

Diffusion

Materials analysis

Arsenic

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