6 April 1990 Characteristics of Reactively Evaporated and Rapid-Thermally Oxidized Yttrium Films on Silicon
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963971
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Yttrium oxide based metal-insulator-semiconductor (MIS) structures on silicon have been studied. Yttrium films were deposited by electron beam evaporation on Si and are then oxidized using an AG Associates Heat Pulse 410 rapid thermal processing (RTP) system. Two yttrium thicknesses (200 Å and 1000Å) were investigated. A second group of MIS structures were fabricated using electron beam deposited yttrium oxides which were subsequently annealed in the RTP system. Scanning electron microscopy shows that the thin yttrium oxide films have smooth surface morphology while the surface for thick oxide films is rough. The electrical properties of the rapidly oxidized yttrium films are compared with the rapidly annealed yttrium oxide films which exhibit superior dielectric properties. X-ray analysis is also conducted and has confirmed the formation of cubic yttrium oxide crystalline structures when the films are subjected to sufficient heat treatment.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. S. Kalkur, R. Y. Kwor, "Characteristics of Reactively Evaporated and Rapid-Thermally Oxidized Yttrium Films on Silicon", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963971; https://doi.org/10.1117/12.963971
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