6 April 1990 Effect Of Silicon Emissivity On Temperature Measurement And Control In Rapid Thermal Processing
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963959
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
The effective emissivity of silicon varies with both temperature and the backside roughness of a wafer. Both of these variations need to be accounted for in the calibration of infrared optical pyrometers used in rapid thermal processing. A fully integrated hardware and software approach is described which calibrates the optical pyrometer over a temperature range of 350°C to 1275°C and provides for recalibration due to wafer to wafer variations in effective emissivity based on room temperature optical characterization of wafer backsides.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John L. Crowley, John L. Crowley, Jimmy C. Liao, Jimmy C. Liao, Jeffrey C. Gelpey, Jeffrey C. Gelpey, } "Effect Of Silicon Emissivity On Temperature Measurement And Control In Rapid Thermal Processing", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963959; https://doi.org/10.1117/12.963959
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