6 April 1990 Emissivity Issues In Pyrometric Temperature Monitoring For RTP Systems
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963960
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
The emissivity of silicon wafers determine the temperature control in closed loop rapid thermal processing (RTP) systems. Silicon surface roughness, doping, and layers affect the intrinsic wafer emissivity, while RTP chamber walls reflectance reduces the amplitude of these effects. For temperatures below 600V, device side topography and layers also affect the emissivity of the wafer. Narrow band and wide band pyrometers show similar behavior with respect to layers on the wafer, as indicated by experimental and modeling techniques.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaim Nulman, Jaim Nulman, "Emissivity Issues In Pyrometric Temperature Monitoring For RTP Systems", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963960; https://doi.org/10.1117/12.963960

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