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6 April 1990 In Situ Reflectivity Measurement In A Rapid Isothermal Processor For Platinum Silicide Formation Kinetics Study
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963967
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
The reflectivity of thin film platinum silicide was measured, by means of a He - Ne laser, when samples of platinum films deposited on top of silicon wafers were annealed in a rapid thermal processor. This processor consists of two rows of tungsten - halogen quartz lamps placed above and below a quartz processing chamber. The thermal cycles consisted of a fast heating (about 200°C/s), followed by an isothermal plateau at temperatures ranging between 410 and 600°C. Films reflectivities dropped in two stages, due to the reaction between platinum and silicon. This two-stage drop was identified as due to the transformation of the platinum film, first into Pt2Si, and then into PtSi. The amounts of time required to complete the transformations were found to be in good agreement with the Arrhenius laws derived from the work of J.T. Pan and I.A. Blech on isothermal low-temperature (220 -330°C) sintering of platinum films on silicon, who unambigously established the correlation between reflectivity changes and silicide formation.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Marie Dilhac, Christian Ganibal, and Thierry Castan "In Situ Reflectivity Measurement In A Rapid Isothermal Processor For Platinum Silicide Formation Kinetics Study", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); https://doi.org/10.1117/12.963967
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