6 April 1990 RTP-CVD: A Single Wafer In-Situ Multiprocessing Manufacturing Technology For ULSI
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963964
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Future integrated circuits manufacturing will require a new class of equipment where large size single wafers are processed and several fabrication steps can be performed sequentially in the same equipment. This is made possible by rapidly changing the wafer temperature and processing environment, and by employing in-situ cleaning and in-situ process monitoring. The implementation of multiple in-situ processing steps within the same equipment has the potential to reduce particulate contamination by improved control of the wafer environment and increase throughput by reducing overall processing time. This should prove to be invaluable for VLSI manufacturing. Furthermore, each isolated process module can be integrated or "clustered" to match processing needs in an "application specific" fashion. In this paper, a novel single wafer multiprocessing technology, rapid thermal processing chemical vapor deposition (RTP-CVD), is described and experimental results are presented for multilayer in-situ growth and deposition of semiconductors and dielectrics.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. L. Kwong, D. L. Kwong, T. Y. Hsieh, T. Y. Hsieh, K. H. Jung, K. H. Jung, W. Ting, W. Ting, S. K. Lee, S. K. Lee, } "RTP-CVD: A Single Wafer In-Situ Multiprocessing Manufacturing Technology For ULSI", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963964; https://doi.org/10.1117/12.963964
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