6 April 1990 Recent Developments of Metal Ohmic Contacts to InP-Based Materials Formed by Rapid Thermal Processing
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990); doi: 10.1117/12.963966
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
The potential advantages of the rapid thermal processing (RTP) technique, in particular its accurate isothermal temperature and time control, motivated its use for alloying and sintering ohmic contacts to InP-based materials. Contact properties, such as stresses, were evaluated and compared to those of the same contacts fabricated by conventional heating cycles. The study included few different metal schemes, such as, Au-based alloys and several non-alloyed refractory systems as Ptai and W, which were deposited as ohmic contacts onto a variety of InP-based materials (InP, InGaAs, InGaAsP). The results revealed significant superiority of the non-alloyed contacts performance, both in the microstructure and electrical properties, demonstrating the potential of RTP as the standard heat treatment for ohmic contact fabrication to InP-based devices.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Katz, S. N. G. Chu, W. C. Dautremont-Smith, M. Soler, B. Weir, P. M. Thomas, "Recent Developments of Metal Ohmic Contacts to InP-Based Materials Formed by Rapid Thermal Processing", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963966; https://doi.org/10.1117/12.963966
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KEYWORDS
Resistance

Temperature metrology

Zinc

Metals

Heat treatments

Indium gallium arsenide

Interfaces

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