6 April 1990 Surface Radiation Characteristics In RTCVD Temperature Measurement/Control
Author Affiliations +
Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963956
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
The effect of the surface emissivity on lamp power and the measured pyrometer temperature is investigated by computer simulation. First, the effect of changing emissivity on wafer tempera-ture at constant lamp power (open loop control) during rapid thermal chemical vapor deposition (RTCVD) is demonstrated both experimentally as well. as simulated. Following this validation of the simulation, three control techniques are proposed which will maintain a constant wafer temperature during processing. These techniques still use a pyrometer or pyrometers as the temperature sensor(s). A control algorithm is developed for one of the techniques. The use of this algorithm is demonstrated via the computer simulation.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Y. Sorrell, F. Y. Sorrell, J. A. Harris, J. A. Harris, M. C. Ozturk, M. C. Ozturk, J. J. Wortman, J. J. Wortman, } "Surface Radiation Characteristics In RTCVD Temperature Measurement/Control", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963956; https://doi.org/10.1117/12.963956

Back to Top