6 April 1990 Temperature Uniformity In RTP Furnaces
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990); doi: 10.1117/12.963958
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
The heat transfer to a wafer in a RTP furnace is simulated by an analytical/numerical model. The model includes radiant heat transfer to the wafer from the lamps, the heat conduction within the wafer, and the emission of radiation from the wafer. Geometric optics are used to predict the radiant heat flux distribution over the wafer. The predicted wafer surface temperature distribution is compared to measurements made in an RTP furnace for two different reflector geometries. Lamp configurations and the resulting heat flux that are required to produce a uniform wafer temperature are defined. Also investigated is the effect of patterns on the wafer surface temperature.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Y. Sorrell, C. P. Eakes, M. C. Ozturk, J. J. Wortman, "Temperature Uniformity In RTP Furnaces", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963958; https://doi.org/10.1117/12.963958
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KEYWORDS
Semiconducting wafers

Lamps

Heat flux

Reflectors

Geometrical optics

Temperature metrology

Numerical analysis

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