6 April 1990 Ultrashallow Diffused Emitter-Base Profiles For Bipolar Device Applications Using Rapid Thermal Processing
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Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963954
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
The viability of rapid thermal processing is assessed for the fabrication of extremely shallow emitter-base profiles in bipolar devices. Junctions diffused from polysilicon using either rapid thermal processing (RTP) or conventional furnace drives are characterized using secondary ion mass spectrometry (SIMS). Results are compared to SUPREM III simulations of the diffusion process. Electrical data is compared for npn polysilicon emitter bipolar devices with emitter-base junctions fabricated using either an RTP emitter drive at 10500C or a conventional furnace drive at 9100C. Potential advantages and disadvantages of RTP are discussed including polysilicon/silicon interface control and required temperature uniformity.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. E. Turner, C. I. Drowley, P. Vande Voorde, S. J. Rosner, and A. Kermani "Ultrashallow Diffused Emitter-Base Profiles For Bipolar Device Applications Using Rapid Thermal Processing", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963954; https://doi.org/10.1117/12.963954
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