Ultrathin Reoxidized Nitrided Oxide Prepared by Rapid Isothermal Processing for Advanced MOS Devices

Takashi Hori; Hiroshi Iwasaki

doi:10.1117/12.963969

6 April 1990 Ultrathin Reoxidized Nitrided Oxide Prepared by Rapid Isothermal Processing for Advanced MOS Devices

Takashi Hori, Hiroshi Iwasaki

Proceedings Volume 1189, Rapid Isothermal Processing; (1990) https://doi.org/10.1117/12.963969
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Deep-submicron MOSFET's require ultrathin (-.._ lOnm) gate dielectrics satisfying high performance and high reliability simultaneously. This paper proposes (reoxidized) nitrided oxides prepared by rapid isothermal processing (RIP) as a replacement of conventional gate-Si02 and investigates the physical properties, defect-charge densities, TDDB reliability, MOSFET performance, and hot-carrier reliability. In contrast with popularly heavy nitridations, light nitridation combined with the subsequent reoxidation improves reliability significantly, while achieving device performance comparable or superior to that of SiO2. An ultrathin (reoxidized) nitrided oxide prepared by RIP is most promising as the gate dielectric of deep-submicron MOSFET's in place of thermal SiO2.

Citation Download Citation

Takashi Hori and Hiroshi Iwasaki "Ultrathin Reoxidized Nitrided Oxide Prepared by Rapid Isothermal Processing for Advanced MOS Devices", Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); https://doi.org/10.1117/12.963969

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