Ar Ion Laser-Assisted Metal-Organic Vapor Phase Epitaxy Of ZnSe

A. Yoshikawa; T. Okamoto; T. Fujimoto; K. Onoue; K. Haseyama; S. Yamaga; H. Kasai

doi:10.1117/12.963974

23 February 1990 Ar Ion Laser-Assisted Metal-Organic Vapor Phase Epitaxy Of ZnSe

A. Yoshikawa, T. Okamoto, T. Fujimoto, K. Onoue, K. Haseyama, S. Yamaga, H. Kasai

Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963974
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

The growth mechanism in photo-assisted metal organic vapor phase epitaxy of ZnSe on GAAs substrate using dimethylzinc and dimethylselenide has been investi-gated using Ar ion laser as an irradiation source. It has been found that following three parameters greatly affect the film growth: (1)hydrogen gas partial pressure, (2)Ar ion laser irradiation, and (3)thickness of the growing ZnSe layer itself. From the results obtained, it has been found that the absorption of photons by ZnSe layer and following formation of excess-holes near the surface are essential for the growth-rate enhancement in the photo-assisted MOVPE of ZnSe. A plausible growth mechanism utilizing a band diagram of ZnSe/GaAs junction in which excess-holes play an important role at the ZnSe surface has been proposed.

Citation Download Citation

A. Yoshikawa, T. Okamoto, T. Fujimoto, K. Onoue, K. Haseyama, S. Yamaga, and H. Kasai "Ar Ion Laser-Assisted Metal-Organic Vapor Phase Epitaxy Of ZnSe", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); https://doi.org/10.1117/12.963974

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