23 February 1990 Laser Induced Surface Chemical Epitaxy
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Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963975
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Studies of the thermal and photon-induced surface chemistry of dimethyl cadmium (DMCd) and dimethyl tellurium (DMTe) on GaAs(100) substrates under ultrahigh vacuum conditions have been performed for substrate temperatures in the range of 123 K to 473 K. Results indicate that extremely efficient conversion of admixtures of DMTe and DMCd to CdTe can be obtained using low power (5 - 10 mJ cm-2) 193 nm laser pulses at substrate temperatures of 123 K. Subsequent annealing at 473 K produces an epitaxial film.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. D. Stinespring, C. D. Stinespring, A. Freedman, A. Freedman, } "Laser Induced Surface Chemical Epitaxy", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963975; https://doi.org/10.1117/12.963975
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