23 February 1990 Point Defects Induced In Silicon During Excimer Laser Doping In BCl3 and PCl3 Atmosphere
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Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963988
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Silicon doping by high fluence pulsed laser irradiation in BC13 and PC13 atmospheres has been performed giving rise to shallow heavily doped junctions. The doped layers are free from extended defects, nevertheless a reduction of carrier mobility has been evidenced. Point defects originated by the fast solidification of the molten surface are responsible for the degradation of the transpOrt properties in the doped layer. The strain profile, originated from the point defect distribution, have been measured for different irradiation conditions. It was evidenced that the defective region is mostly limited inside the doped layer. A remarkable reduction of point defects is obseved when the laser irradiation takes place on samples kept at 400°C. At this temperature the speed of the solidification front is reduced of about 40%, thus limiting the number of quenched point defects.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. G. Bentini, G. G. Bentini, M. Bianconi, M. Bianconi, L. Correra, L. Correra, R. Fabbri, R. Fabbri, R. Nipoti, R. Nipoti, S. Nicoletti, S. Nicoletti, } "Point Defects Induced In Silicon During Excimer Laser Doping In BCl3 and PCl3 Atmosphere", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963988; https://doi.org/10.1117/12.963988
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