23 February 1990 Resistless Microfabrication Of Cu Thin Films On N-Type GaAs By Projection Patterned Excimer Laser Doping
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Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963977
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Resistless microfabrication of Cu thin films on n-type GaAs by projection patterned laser doping using a KrF excimer laser and a SiH4 gas is described. Copper thin films with a linewidth as narrow as 2.35gm are deposited selectively on the doped region by electroplating in a CuSO4 aqueou solution. The resistivity of the deposited Cu films is evaluated to be 2.45x 10° S2cm, which is compared to that of bulk Cu. Using this technique, nonallpyed ohmic contacts can be formed with a specific contact resistance of 2.32x 10a S2 cm 4, which is one-thirtieth of that of the conventional alloyed contacts. The mechanism of Cu film deposition by electroplating is discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koji Sugioka, Koji Sugioka, Koichi Toyoda, Koichi Toyoda, } "Resistless Microfabrication Of Cu Thin Films On N-Type GaAs By Projection Patterned Excimer Laser Doping", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963977; https://doi.org/10.1117/12.963977
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