Wavelength Dependence Of Boron Doping In Silicon Photochemical Vapor Deposition

Satoru Watanabe; Tatsuya Yamazaki; Takashi Ito

doi:10.1117/12.963983

23 February 1990 Wavelength Dependence Of Boron Doping In Silicon Photochemical Vapor Deposition

Satoru Watanabe, Tatsuya Yamazaki, Takashi Ito

Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963983
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

We investigated silicon photochemical vapor deposition using a disilane, diborane, and hydrogen gas system under a deuterium and a mercury lamps. Vacuum ultraviolet light reduces seriously the boron doping. We found that this is mainly due to gas phase reaction of vacuum ultraviolet excited radicals. Ultraviolet light does not affect these gas phase reaction. It irradiates the wafer surface and make it active. The enhancement of the electric activation rate of boron in silicon layer observed under UV irradiation is due to the surface activation.

Citation Download Citation

Satoru Watanabe, Tatsuya Yamazaki, and Takashi Ito "Wavelength Dependence Of Boron Doping In Silicon Photochemical Vapor Deposition", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); https://doi.org/10.1117/12.963983

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