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23 February 1990 Wavelength Dependence Of Boron Doping In Silicon Photochemical Vapor Deposition
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Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963983
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
We investigated silicon photochemical vapor deposition using a disilane, diborane, and hydrogen gas system under a deuterium and a mercury lamps. Vacuum ultraviolet light reduces seriously the boron doping. We found that this is mainly due to gas phase reaction of vacuum ultraviolet excited radicals. Ultraviolet light does not affect these gas phase reaction. It irradiates the wafer surface and make it active. The enhancement of the electric activation rate of boron in silicon layer observed under UV irradiation is due to the surface activation.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoru Watanabe, Tatsuya Yamazaki, and Takashi Ito "Wavelength Dependence Of Boron Doping In Silicon Photochemical Vapor Deposition", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); https://doi.org/10.1117/12.963983
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