Beyond EUV measurement at NewSUBARU synchrotron light facility

Takuto Fujii; Shinji Yamakawa; Tetsuo Harada; Takeo Watanabe

doi:10.1117/12.2600986

23 August 2021 Beyond EUV measurement at NewSUBARU synchrotron light facility

Takuto Fujii, Shinji Yamakawa, Tetsuo Harada, Takeo Watanabe

Proceedings Volume 11908, Photomask Japan 2021: XXVII Symposium on Photomask and Next-Generation Lithography Mask Technology; 119080T (2021) https://doi.org/10.1117/12.2600986
Event: Photomask Japan 2021, 2021, Online Only

Abstract

In 2019, EUV lithography technology with a wavelength of 13.5 nm was used for the mass production of semiconductor logic devices with 7 nm node. As with small feature size of electronic circuits in semiconductor device will be required in the future, beyond EUV (BEUV) lithography with exposure wavelength around 6.7 nm is a candidate for the next generation lithography. In BEUV, the developments of high-reflective multilayers, high-sensitive resists, and high-power light sources are critical issues. Thus, we have developed BEUV evaluation tools in NewSUBARU synchrotron light facility. Accurate BEUV reflectometry is significant for the development of high-reflective BEUV multilayer. For the accurate reflectometry, higher-diffraction-order generated from a monochromator should be suppressed. At the BL10 beamline at NewSUBARU, the components of second and third-diffraction-order light are 7% mixed into the BEUV measurement light. Mo transmission filter with a 200-nm-thick was previously used to suppress the higher-order light to 1/10, which was insufficient for target accuracy of 0.1%. We have developed a high-order-light cutting unit consisting of two mirrors with TiO₂ coating, which suppressed the high-order light to 1/100.

Citation Download Citation

Takuto Fujii, Shinji Yamakawa, Tetsuo Harada, and Takeo Watanabe "Beyond EUV measurement at NewSUBARU synchrotron light facility", Proc. SPIE 11908, Photomask Japan 2021: XXVII Symposium on Photomask and Next-Generation Lithography Mask Technology, 119080T (23 August 2021); https://doi.org/10.1117/12.2600986

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