PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
High-order harmonics can be efficiently generated by high power mid-infrared ultrashort laser excitation of semiconductor materials. Interaction of an intense femtosecond pulse with finite structures involves a complex interplay of linear and nonlinear propagation effects and electron-hole carrier dynamics, which can be self-consistently analyzed numerically by a coupled Maxwell-Semiconductor Bloch model. In the current work, such an approach based on a three-band model for gallium arsenide [111] is applied to elucidate the influence of multiple reflections and transmissions from a finite slab on the high-order harmonic emission. Reflected and transmitted spectra including even and odd harmonics are theoretically analyzed as a function of the slab thickness and the field amplitude. Spatial distributions of laser-induced carriers are shown to be strongly inhomogeneous and thickness-dependent. The developed approach opens new frontiers for exploring ultrashort laser interaction regimes with nanostructures of arbitrary geometry.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Anton Rudenko, Maria K. Hagen, Jörg Hader, Miroslav Kolesik, Stephan W. Koch, Jerome V. Moloney, "Maxwell-Semiconductor Bloch simulations of high-harmonic
generation in finite thickness semiconductor slabs," Proc. SPIE 11999, Ultrafast Phenomena and Nanophotonics XXVI, 119990A (7 March 2022); https://doi.org/10.1117/12.2625903